Vapor phase epitaxial growth device

ABSTRACT

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

The present application is a divisional of U.S. patent application Ser.No. 16/649,371, filed on Mar. 20, 2020, which is a U.S. national stagefiling under 35 U.S.C. § 371 of PCT/JP2018/033324, filed on Sep. 7, 2018which claims priorities to Japanese Patent Application No. 2017-183987filed on Sep. 25, 2017, Japanese Patent Application No. 2018-92435 filedon May 11, 2018, and Japanese Patent Application No. 2018-92438 filed onMay 11, 2018, the contents of which are hereby incorporated by referenceinto the present application. The description herein discloses an artrelated to a vapor phase epitaxial growth device of a compoundsemiconductor.

TECHNICAL FIELD Background Art

Establishment of a low-cost manufacturing method of a GaN substrate isin demand. Currently, a single wafer processing method which grows theGaN substrate on one-by-one basis is dominant, and this has been a causeof high cost. A relevant technique is described in JP 2002-316892 A.

DISCLOSURE OF INVENTION Technical Problem

If long GaN crystal growth is enabled, a plurality of wafers can beproduced from a single long crystal, by which substrate manufacturingcost can be reduced. However, such long crystal growth of GaN isdifficult. One of causes thereof is that dust generated during crystalgrowth adhere to a wafer surface, and this leads to abnormal growth.

Solution to Problem

The present description discloses a vapor phase epitaxial growth device.the device comprises a reactor vessel. The device comprises a waferholder arranged within the reactor vessel. The wafer holder includes awafer holding surface configured to hold a wafer with a wafer surfaceoriented substantially vertically downward. The device comprises a firstmaterial gas supply pipe configured to supply a first material gas intothe reactor vessel. The first material gas supply pipe is arranged belowthe wafer holding surface. The device comprises a second material gassupply pipe configured to supply a second material gas, which reactswith the first material gas, into the reactor vessel. The secondmaterial gas supply pipe is arranged below the wafer holding surface.The device comprises a gas exhaust pipe configured to exhaust gases inthe reactor vessel. The gas exhaust pipe is arranged below the waferholding surface. The first material gas supply pipe, the second materialgas supply pipe, and the gas exhaust pipe are arranged to extend along asubstantially vertical direction. A distance between the gas exhaustpipe and an axis line passing through a center of the wafer holdingsurface and vertical to the wafer holding surface is greater thandistances between the axis line and each of the first material gassupply pipe and the second material gas supply pipe.

The vapor phase epitaxial growth device disclosed herein can maintainthe wafer surface oriented substantially vertically downward. Dustgenerated within the reactor vessel does not fall onto the wafer surfaceby gravity, by which the dust can be suppressed from adhering to thewafer surface. Further, in a case of exhausting the gases to an upperside with respect to the wafer, the dust having flowed up above thewafer by the exhausted gases might adhere to the wafer surface due tofalling by gravity. In the vapor phase epitaxial device disclosedherein, the gas exhaust pipe is arranged below the wafer holdingsurface, by which the gases within the reactor vessel can be exhaustedto a lower side with respect to the wafer. Since the dust does not flowup above the wafer, the dust can be suppressed from adhering to thewafer surface.

The vapor phase epitaxial growth device may comprise a first heaterarranged around the wafer holder, the first material gas supply pipe,the second material gas supply pipe, and the gas exhaust pipe.

The vapor phase epitaxial growth device may comprise a partition wallarranged on a passage of the first material gas supply pipe passage andextending in a horizontal direction. The device may comprise firstmaterial gas generation unit configured to generate the first materialgas, arranged below the partition wall, and having an inlet of the firstmaterial gas supply pipe connected thereto. The device may comprise asecond heater arranged around the first material gas generation unit.The first heater may be arranged on an upper side with respect to thepartition wall. The second heater may be arranged on a lower side withrespect to the partition wall. The first heater may have a higherheating temperature than the second heater.

The vapor phase epitaxial growth device may comprise a shower headincluding a surface on which a plurality of first nozzles configured tosupply the first material gas into the reactor vessel and a plurality ofsecond nozzles configured to supply the second material gas into thereactor vessel are arranged. Outlets of the first material gas supplypipe and the second material gas supply pipe may be connected to theshower head. The surface of the shower head may be arranged at aposition below the wafer holding surface and facing the wafer holdingsurface. The gas exhaust pipe may be arranged around the shower head.

The surface of the shower head may have a material not containingsilicon nor oxygen arranged thereon.

The surface of the shower head may have a material containing tungstenarranged thereon.

Each of the plurality of first nozzles may include a first center holeconfigured to discharge the first material gas. Each of the plurality offirst nozzles may include a first surrounding hole arranged around thefirst center hole and configured to discharge a particular gas. Thesecond nozzle may include a second center hole configured to dischargethe second material gas. The second nozzle may include a secondsurrounding hole arranged around the second center hole and configuredto discharge the particular gas. The particular gas may be a gas notcontaining oxygen and is a gas that does not react with the firstmaterial gas nor with the second material gas.

The vapor phase epitaxial growth device may comprise a particular gassupply unit configured to supply a particular gas into the reactorvessel substantially vertically downward from above the wafer holder.The particular gas may be a gas not containing oxygen and is a gas thatdoes not react with the first material gas nor with the second materialgas.

The particular gas may be a gas containing at least one of hydrogen,nitrogen, helium, neon, argon, and krypton.

The surface of the wafer holder has a material not containing siliconnor oxygen arranged thereon.

A surface of the wafer holder may have a material containing tungstenarranged thereon.

The vapor phase epitaxial growth device may comprise a first heatingunit. A surface of at least one of the first material gas supply pipeand the second material gas supply pipe in a region in a vicinity of agas supply outlet may be covered with a particular metal. The particularmetal may be a metal capable of decomposing the second material gas by acatalytic effect. The first heating unit may be configured to heat asurface of the particular metal to 800° C. or higher.

The vapor phase epitaxial growth device disclosed herein can increasethe catalytic effect of the particular metal by heating the surface ofthe particular metal to 800° C. or higher. Accordingly, the secondmaterial gas can be decomposed on the surface(s) in the region in thevicinity of the gas supply outlet. Due to this, deposition of GaNpolycrystal in the region in the vicinity of the gas supply outlet canbe suppressed.

The vapor phase epitaxial growth device may comprise a shower headhaving a plurality of gas supply outlets of the first material gassupply pipe and a plurality of gas supply outlets of the second materialgas supply pipe arranged thereon. A surface of the shower head at leaston a gas supply outlet side may be covered with the particular metal.

The gas supply outlet may be arranged at ends of the first material gassupply pipe and the second material gas supply pipe. An inner wall andan outer wall of the first material gas supply pipe in a region in avicinity of the end of the first material gas supply pipe on a gassupply outlet side may be covered with the particular metal. An innerwall and an outer wall of the second material gas supply pipe in aregion in a vicinity of the end of the second material gas supply pipeon the gas supply outlet side may be covered with the particular metal.

An inner diameter of the second material gas supply pipe may be largerthan an outer diameter of the first material gas supply pipe. The firstmaterial gas supply pipe may be arranged inside the second material gassupply pipe.

The first material gas supply pipe and the second material gas supplypipe may configure an integrated common pipe. The first material gas andthe second material gas may be supplied to an inlet of the common pipelocated opposite from the gas supply outlet. The common pipe may have aninner wall that is covered with the particular metal over an entirelength from the inlet to the gas supply outlet. the device may comprisea second heating unit configured to heat the common pipe over the entirelength from the inlet to the gas supply outlet to 800° C. or higher.

The vapor phase epitaxial growth device may comprise a third heatingunit configured to heat a temperature of a region between the waferholder and the gas supply outlet of the first material gas supply pipeand the second material gas supply pipe to 500° C. or higher.

The vapor phase epitaxial growth device may comprise a first supply unitconfigured to supply the first material gas to an inlet of the firstmaterial gas supply pipe located opposite from the gas supply outlet.The device may comprise a second supply unit configured to supply thesecond material gas to an inlet of the second material gas supply pipelocated opposite from the gas supply outlet. The first supply unit andthe second supply unit may be configured to supply the first materialgas and the second material gas during a period in which the surface ofthe particular metal is 800° C. or higher.

The first supply unit and the second supply unit may be configured tostart to supply the first material gas and the second material gas afterthe surface of the particular metal has been heated to 800° C. or higherby the first heating unit. The first heating unit may be configured tostop heating the surface of the particular metal after supplies of thefirst material gas and the second material have been stopped by thefirst supply unit and the second supply unit.

The particular metal may include tungsten, a metal containing tungsten,an oxide of tungsten, an oxide of metal containing tungsten, a carbideof tungsten, a carbide of metal containing tungsten, a nitride oftungsten, or a nitride of metal containing tungsten.

The vapor phase epitaxial growth device may comprise a ring unitincluding a hole corresponding to the wafer held by the wafer holdingsurface. The device may comprise an actuator configured to move at leastone of the wafer holder and the ring unit along the axis line verticalto the wafer holding surface. The actuator may be configured to maintaina constant distance between a surface of the ring unit and a surface ofa compound semiconductor crystal grown on the wafer.

In the vapor phase epitaxial growth device disclosed herein, thedistance between the surface of the ring unit and the surface of thecompound semiconductor crystal grown on the wafer can be maintainedconstant by the actuator. Due to this, even in a case where the crystalgrows and a thickness thereof increases, flows of the first and secondmaterial gases at an outer peripheral portion of the wafer can bemaintained constant. Thus, a uniform crystal can be obtained even whenthe crystal becomes thick. Further, by supporting an outer peripheralportion of the crystal by an inner wall surface of the ring unit, an endsurface of the outer peripheral portion of the grown crystal can beconfigured as a surface vertical to a wafer surface. An occurrence of acrack in the grown crystal can be avoided.

The actuator may be configured to move the wafer holder to a surfaceside that is opposite from the wafer holding surface. A moving speed ofthe wafer holder may be equal to a growing speed of the compoundsemiconductor crystal in a thickness direction.

The actuator may be configured to maintain a state in which a distancefrom the wafer holding surface to the surface of the ring unit isgreater than a distance from the wafer holding surface to the surface ofthe compound semiconductor crystal grown on the wafer by a predetermineddistance.

The surface of the ring unit may be covered with a particular metalcapable of decomposing the second material gas by a catalytic effect.

The particular metal may include tungsten, a metal containing tungsten,an oxide of tungsten, an oxide of metal containing tungsten, a carbideof tungsten, a carbide of metal containing tungsten, a nitride oftungsten, or a nitride of metal containing tungsten.

The gas supply outlet of the first and second material gas supply pipesmay be arranged at a position facing the wafer holding surface. Theactuator may be configured to move the wafer holder so as to maintain aconstant distance between the gas supply outlet and the surface of thecompound semiconductor crystal grown on the wafer.

The first material gas may be a gas containing GaCl. The second materialgas may be a gas containing NH₃.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device along a lateral direction.

FIG. 2 is a view seeing a cross-section along a line II-II fromvertically above.

FIG. 3 is an enlarged view of an upper surface of a first nozzle and across-sectional view thereof.

FIG. 4 shows a temperature distribution.

FIG. 5 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to a second embodiment along thelateral direction.

FIG. 6 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to a third embodiment along thelateral direction.

FIG. 7 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to a fourth embodiment along thelateral direction.

FIG. 8 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to a fifth embodiment along thelateral direction.

FIG. 9 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to a sixth embodiment along thelateral direction.

FIG. 10 is a partially enlarged view of a cross-section of a waferholder, a ring plate, and a shower head.

FIG. 11 is a view seeing a cross-section along a line A-A fromvertically below.

FIG. 12 is a partially enlarged view of the cross-section of the waferholder, the ring plate, and the shower head.

FIG. 13 is a partially enlarged view of the cross-section of the waferholder, the ring plate, and the shower head.

FIG. 14 is a partially enlarged view of a cross-section of a waferholder, a ring plate, and a shower head of a comparative example.

FIG. 15 is a partially enlarged view of the cross-section of the waferholder, the ring plate, and the shower head of the comparative example.

FIG. 16 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to a seventh embodiment along thelateral direction.

FIG. 17 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device according to an eighth embodiment along thelateral direction.

FIG. 18 is a schematic cross-sectional view seeing a shower headprovided with a mixing chamber along the lateral direction.

DESCRIPTION OF THE EMBODIMENTS First Embodiment <Configuration of VaporPhase Epitaxial Growth Device>

FIG. 1 shows a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 1 according to an aspect of the art disclosedherein along a lateral direction. The vapor phase epitaxial growthdevice 1 is an example of a device configuration for implementing a HVPE(Hydride/Halide Vapor Phase Epitaxy) method. The vapor phase epitaxialgrowth device 1 is provided with a reactor vessel 10. The reactor vessel10 has a cylindrical shape. The reactor vessel 10 may be constituted ofquartz. A material gas supply unit 20 and a wafer holder 11 are arrangedwithin the reactor vessel 10.

A structure of the material gas supply unit 20 will be described. Thematerial gas supply unit 20 is a cylindrical member. The material gassupply unit 20 is provided with a cylindrical cover 24. A disk-shapedshower head 50 is arranged at an upper end of the cover 24. Inlets ofHCl gas supply pipes 25 and inlets of second material gas supply pipes22 are arranged at a lower portion of the material gas supply unit 20. Agas containing HCl is supplied to the inlets of the HCl gas supply pipes25. Outlets of the HCl gas supply pipes 25 are connected to a firstmaterial gas generation unit 41. The first material gas generation unit41 accommodates metal gallium therein. The first material gas generationunit 41 is a unit configured to generate a first material gas G1containing GaCl. First material gas supply pipes 21 are pipes configuredto supply the first material gas G1. Inlets of the first material gassupply pipes 21 are connected to the first material gas generation unit41. Outlets of the first material gas supply pipes 21 are connected tothe shower head 50. A gas containing a second material gas G2 issupplied to the inlets of the second material gas supply pipes 22. Thesecond material gas G2 is a gas containing NH₃. Outlets of the secondmaterial gas supply pipes 22 are connected to the shower head 50.

The first material gas supply pipes 21 and the second material gassupply pipes 22 are arranged to extend in a vertical direction (i.e., az-axis direction of FIG. 1 ). A partition wall 42 is arranged onpassages of the first material gas supply pipes 21 and the secondmaterial gas supply pipes 22. The partition wall 42 is a quartz plateextending inside the cover 24 in a horizontal direction. A space insidethe cover 24 is partitioned into upper and lower parts by the partitionwall 42.

The shower head 50 is a unit configured to discharge the first materialgas G1 and the second material gas G2 to a vicinity of a surface of awafer 13. The first material gas G1 and the second material gas G2discharged from the shower head 50 flows within the reactor vessel 10 ina direction of arrows Y1.

A structure of the shower head 50 will be described with reference toFIGS. 2 and 3 . FIG. 2 is a view seeing a cross-section along a lineII-II of FIG. 1 from vertically above. A plurality of first nozzles 51configured to discharge the first material gas G1 and a plurality ofsecond nozzles 52 configured to discharge the second material gas G2 arearranged on a surface of the shower head 50. By discharging the firstmaterial gas G1 and the second material gas G2 from such a large numberof nozzles, a gas supply amount to the surface of the wafer 13 can beuniformized thoroughly over a wafer plane. Due to this, a variation in agrown GaN crystal film thickness over the wafer plane can be suppressed.

A material that does not contain silicon and oxygen is arranged on thesurface of the shower head 50. The material arranged on the surface ofthe shower head 50 is preferably a material that is stable in a hightemperature environment and an ammonic atmosphere. In the presentembodiment, a material containing tungsten is arranged on the surface ofthe shower head 50. Due to this, as a first effect, GaN polycrystal issuppressed from being deposited on the surface of the shower head 50.This is achieved due to a catalytic effect of tungsten. As a secondeffect, a temperature of the surface of the shower head 50 can beuniformized. This is achieved due to tungsten being metal with highthermal conductivity, which enables to transfer heat to a center of theshower head 50 when an outer periphery of the shower head 50 is heatedby a first heater 31. As a third effect, a situation in which oxygen andsilicon impurities are generated from the shower head 50 can be avoided.This is achieved due to covering the surface of the shower head 50 bytungsten, which is a material that does not contain silicon and oxygen.

Further, as shown in FIG. 2 , an upper surface of the cover 24 isarranged at the outer periphery of the shower head 50. Due to this, theupper surface of the cover 24 functions as a part of the shower head 50.A material containing tungsten may be arranged also on this uppersurface of the cover 24. By doing so, the GaN polycrystal is suppressedfrom being deposited on the upper surface of the cover 24.

FIG. 3 is an enlarged view of an upper surface of one first nozzle 51and a cross-sectional view thereof. Each first nozzle 51 is providedwith a center hole 54 configured to discharge the first material gas G1and a surrounding hole 55 arranged around the center hole 54 andconfigured to discharge a particular gas G3. The particular gas G3 is agas that does not contain oxygen, and is a gas that does not react withthe first material gas G1 nor with the second material gas G2. As aspecific example, the particular gas G3 is a gas containing at least oneof hydrogen, nitrogen, helium, neon, argon, and krypton. For example,argon, which is an inert gas not containing N being a constituentelement of a nitride semiconductor, and helium, which is an inert gasnot containing H being is a constituent element of the second materialgas G2, may be used to suppress unexpected reactions. Further, it ispossible to improve an air-curtain function to be described later byconfiguring the particular gas G3 to contain argon, which has a largeratomic radius than nitrogen. A cross-sectional structure of the secondnozzles 52 is same as that of the first nozzles 51 described inconnection to FIG. 3 . That is, each second nozzle 52 is provided with acenter hole configured to discharge the second material gas G2 and asurrounding hole arranged around the center hole and configured todischarge the particular gas G3.

Due to this, a gas layer constituted of the particular gas G3 can beformed around the first material gas G1 discharged from each of thefirst nozzles 51 and around the second material gas G2 discharged fromeach of the second nozzles 52. The gas layer of the particular gas G3function as an air curtain in a vicinity of a surface 50 a of the showerhead 50 but is sufficiently diffused in a vicinity of a surface of thewafer 13 thus does not function as an air curtain. As such, the firstmaterial gas G1 and the second material gas G2 do not mix in thevicinity of the surface 50 a of the shower head 50 but mix in thevicinity of the surface of the wafer 13. Due to this, the GaNpolycrystal can be suppressed from being deposited on the surface 50 aof the shower head 50 and GaN monocrystal can be grown on the surface ofthe wafer 13.

Numbers and arrangement layouts of the first nozzles 51 and the secondnozzles 52 may freely be set based on various parameters, such asnecessary supply amounts of the gases and influences they impose onstates of gas flows. Further, the surface of the shower head 50 may bepartitioned into a plurality of zones and gas flow rates mayindividually controlled for each zone. Further, the first nozzles 51 andthe second nozzles 52 may have various shapes. They may be circular,polygonal, or slit-like, for example.

A gas exhaust pipe 23 configured to exhaust the gases in the reactorvessel 10 is provided around the material gas supply unit 20. This willbe described with reference to FIG. 2 . FIG. 2 is a view seeing a crosssection along a line II-II of FIG. 1 from vertically above. Thecylindrical material gas supply unit 20 is further arranged inside thecylindrical reactor vessel 10. Due to this, a ring-shaped gap is definedbetween an inner wall of the reactor vessel 10 and an outer wall of thecover 24 of the material gas supply unit 20. This ring-shaped gapfunctions as the gas exhaust pipe 23. That is, the gas exhaust pipe 23is arranged to extend vertically below (that is, along a z axisdirection of FIG. 2 ) along the outer wall of the material gas supplyunit 20 and the inner wall of the reactor vessel 10. According to this,the gas exhaust pipe 23 can be arranged to surround outer peripheries ofthe shower head 50, the first material gas supply pipes 21, and thesecond material gas supply pipes 22. In other words, a relationship asfollows is established between the first material gas supply pipes 21,the second material gas supply pipes 22, and the gas exhaust pipe 23:“An axis line A1 (see FIG. 1 ) passing through a center of the waferholding surface 9 a and vertical to the wafer holding surface 9 a isassumed. A distance between the axis line A1 and the gas exhaust pipe 23is greater than distances between the axis line A1 and each of the firstmaterial gas supply pipes 21 and the second material gas supply pipes”.

Further, an inlet 23 a of the gas exhaust pipe 23 may be located on alateral side surface of the shower head 50. As such, as shown by arrowsY2 in FIG. 1 , the first material gas G1 and the second material gas G2that were used for GaN crystal growth on the surface of the wafer 13 canbe exhausted in a lateral side surface direction of the shower head 50and a downward direction from the wafer 13. An outlet 23 b of the gasexhaust pipe 23 is arranged at a lower end of the reactor vessel 10.Gases that are suctioned from the inlet 23 a of the gas exhaust pipe 23is discharged to a vent line from the outlet 23 b.

Further, a distance from the inlet 23 a to the outlet 23 b can be madesufficiently long by arranging the inlet 23 a of the gas exhaust pipe 23on the lateral side surface of the shower head 50 and the outlet 23 bthereof at the lower end of the reactor vessel 10. With thisconfiguration, even in a case where the outlet 23 b is provided in apart of the circular ring-shaped gas exhaust pipe 23, the gases canuniformly be suctioned from the inlet 23 a at the outer periphery of theshower head 50. Due to this, an uneven flow of the gases can besuppressed.

The wafer holder 11 is arranged within the reactor vessel 10. The waferholder 11 is provided with a wafer holder 9 on its lower surface. Thewafer holder 9 is constituted of a material having high thermalconductivity. In the present embodiment, the wafer holder 9 is SiCcrystal. Due to this, a temperature of the surface of the wafer 13 canbe uniformized. This is achieved because SiC is a material with highthermal conductivity, and when an outer periphery of the wafer 13 isheated by the first heater 31, heat can be transmitted to a center ofthe wafer 13.

A wafer holding surface 9 a is arranged on a lower surface of the waferholder 9. The wafer holding surface 9 a is configured to hold the wafer13 such that the surface of the wafer 13 is oriented substantiallyvertically downward. Here, “oriented substantially vertically downward”refers to a direction along which dust having fallen by gravity does notfall on the wafer surface. As such, “oriented substantially verticallydownward” is not limited to a configuration in which a normal line ofthe wafer matches a vertically downward direction. It is a concept thatencompasses angled orientations with the normal line of the wafer beingangled up to 45 degrees with respect to the vertically downwarddirection. The surface of the shower head 50 is arranged below the waferholding surface 9 a of the wafer holder 11 at a position facing thewafer holding surface 9 a.

A material that does not contain silicon and oxygen is arranged on asurface of the wafer holder 11. In the present embodiment, a materialcontaining tungsten is arranged on the surface of the wafer holder 11.Due to this, an effect of suppressing deposition of the GaN polycrystalon the surface of the wafer holder 11, an effect of uniformizing atemperature of the surface of the wafer holder 11, and an effect ofsuppressing generation of oxygen and silicon impurities are achieved.Reasons therefor are same as the contents described earlier inconnection to the shower head 50.

A lower end of a rotary shaft 14 is connected to an upper portion of thewafer holder 11. An upper end of the rotary shaft 14 protrudes outsidethe reactor vessel 10. The upper end of the rotary shaft 14 is connectedto an actuator 15. Due to this, the wafer holder 11 can be rotated andmoved up and down within the reactor vessel 10.

Particular gas supply pipes 16 are provided at an upper portion of thereactor vessel 10. The particular gas G3 is supplied to inlets of theparticular gas supply pipes 16. The particular gas G3 flows verticallydownward from above the wafer holder 11 as shown by arrows Y3 in FIG. 1and is suctioned into the inlet 23 a of the gas exhaust pipe 23. Due tothis, a downflow can be generated by the particular gas G3.

An effect will be described. The downflow of the particular gas G3suppresses the first material gas G1, the second material gas G2, andreaction products from rising above the wafer holder 11. Due to this,the upper portion of the wafer holder 11 is suppressed from beingcontaminated by GaN polycrystal and reaction products. An occurrence ofa situation in which dust falls from above the wafer holder 11 can besuppressed. Further, since contamination of the rotary shaft 14 and itsrotary mechanism arranged at the upper portion of the wafer holder 11can be suppressed, a rotary operation of the wafer holder 11 can bestabilized.

The first heater 31 and a second heater 32 are arranged outside thereactor vessel 10. The first heater 31 is arranged on an upper side withrespect to the partition wall 42. The first heater 31 is arranged toaround the wafer holder 11, first material gas supply pipes 21, thesecond material gas supply pipes 22, and the gas exhaust pipe 23. Thesecond heater 32 is arranged on a lower side with respect to thepartition wall 42. The second heater 32 is arranged around the firstmaterial gas generation unit 41.

<Vapor Phase Epitaxy Method>

A method of executing vapor phase epitaxy of a GaN layer on the wafer 13by a HVPE method will be described. An example of a vapor phaseepitaxial condition will be listed. Supply amounts of GaCl in the firstmaterial gas G1 and NH₃ in the second material gas G2 are set to a moleratio of 1:20. A pressure inside the reactor vessel 10 is set to 1000hPa and a pressure at the outlet 23 b of the gas exhaust pipe 23 is setto 990 hPa.

As shown in FIG. 1 , the partition wall 42 is arranged in a vicinity ofa boundary between a region H1 where the first heater 31 is arranged anda region H2 where the second heater 32 is arranged. The partition wall42 functions as a heat insulator. As such, a heating temperature can becontrolled individually for each region with the partition wall 42 asthe boundary. In the present embodiment, the first heater 31 is set tohave a higher heating temperature than the second heater 32. Due tothis, a temperature distribution as shown in FIG. 4 is realized. In FIG.4 , a horizontal axis indicates a positional relationship of therespective members in the vertical direction and a vertical axisindicates a temperature. The wafer 13 can be heated to a temperaturethat is sufficient for GaN crystal growth (1050±50° C.) by using thefirst heater 31. Further, the first material gas generation unit 41 canbe heated to a temperature that is necessary for generation of GaCl(750° C. or higher) by using the second heater 32. The heatingtemperatures of the wafer 13 and of the first material gas generationunit 41 have a temperature difference of about 300° C., however, due tothe partition wall 42 functioning as the heat insulator, a distancebetween the wafer 13 and the first material gas generation unit 41 canbe designed short while maintaining this temperature difference. Due tothis, a size reduction of the vapor phase epitaxial growth device 1 canbe achieved.

<Effect>

In the HVPE method, it is difficult to grow a long crystal (which mayalso be termed a thick crystal) on a C-plane of GaN. This is due to adifficulty in suppressing occurrence of abnormal growth. Following threefactors may be exemplified as causes of such abnormal growth. The firstfactor is the dust generated in the reactor vessel falling onto thewafer surface by gravity. The second factor is occurrences of gas pipeclogs and changes in gas flows caused by the deposition of the GaNpolycrystal on the first nozzles 51 and the second nozzles 52 of theshower head 50. The third factor is an occurrence of changes in gasflows caused by ammonium chloride powder blocking the gas exhaust pipe23 and the like.

As a countermeasure to the first factor, the wafer holder 11 in thedescription herein is configured to hold the surface of the wafer 13oriented substantially vertically downward. Since the dust generated inthe reactor vessel 10 does not fall onto the surface of the wafer 13 bygravity, the dust can be suppressed from adhering to the surface of thewafer 13. Further, in a case of exhausting the gases to an upper sidewith respect to the wafer 13, the dust having flowed up above the waferby the exhausted gases might adhere to the surface of the wafer 13 dueto falling by gravity. In the vapor phase epitaxial growth device 1 inthe description herein, since the gas exhaust pipe 23 is arranged belowthe wafer holding surface 9 a, the gases within the reactor vessel 10can be exhausted to a lower side with respect to the wafer 13. Since thedust does not flow up above the wafer 13, the dust can be suppressedfrom adhering to the surface of the wafer 13.

As a countermeasure to the second factor, the material containingtungsten is arranged on the surface of the shower head 50. Further, thesurrounding holes 55 configured to discharge the particular gas G3 arearranged around the center holes 54 configured to discharge the firstmaterial gas G1 and the second material gas G2. Due to this, thedeposition of the GaN polycrystal on the surface of the shower head 50can be suppressed by the catalytic effect and the air curtain function.

As a countermeasure to the third factor, the first heater 31 is arrangedto surround the wafer holder 11, the first material gas supply pipes 21,the second material gas supply pipes 22, and the gas exhaust pipe 23.Due to this, the gas exhaust pipe 23 can be heated simultaneously whenthe wafer 13 held by the wafer holder 11 is heated. The heatingtemperature of the wafer 13 (about 1050° C.) is sufficiently higher thana temperature at which the ammonium chloride powder, which is abyproduct, is generated in the gas exhaust pipe 23 (about 200° C.), thusthe ammonium chloride powder is suppressed from clogging within the gasexhaust pipe 23.

Second Embodiment <Configuration of Vapor Phase Epitaxial Growth Device>

FIG. 5 shows a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 1 a according to an aspect of the art disclosedherein along a lateral direction. Since members having same referencesigns between the vapor phase epitaxial growth device 1 a of FIG. 5 andthe vapor phase epitaxial growth device 1 of FIG. 1 are identical,description thereof will be omitted.

A first valve 61 is arranged at an inlet of each of HCl gas supply pipes25. The first valves 61 are configured to control supplies of a gascontaining HCl. A second valve 62 is arranged at an inlet of each ofsecond material gas supply pipes 22. The second valves 62 are configuredto control supplies of a gas containing a second material gas G2. Apartition wall 42 functions as a heat insulator.

FIG. 2 is a view seeing a cross-section along a line II-II in FIG. 5from vertically above. Regions on a surface of a shower head 50 wherefirst nozzles 51 and second nozzles 52 are not provided are covered witha particular metal 53. In other words, surfaces of the regions in avicinity of the first nozzles 51 and the second nozzles 52 is coveredwith the particular metal 53. The particular metal 53 is a substancecapable of decomposing NH₃ contained in the second material gas by acatalytic effect. The particular metal 53 may be constituted of a metalplate with a thickness of several millimeters. A plurality of holescorresponding to positions and hole diameters of the first nozzles 51and the second nozzles 52 may be provided in the metal plate. In thepresent embodiment, tungsten is used as the particular metal.

A first heater 31 and a second heater 32 are arranged outside a reactorvessel 10. The partition wall 42 is arranged in a vicinity of a boundarybetween a region H1 where the first heater 31 is arranged and a regionH2 where the second heater 32 is arranged. The first heater 31 isarranged around regions R1 to R3 shown in FIG. 5 . The region R1 is aregion including a wafer 13. The region R1 is a region in which atemperature sufficient for GaN crystal growth (1050±50° C.) needs to bemaintained. The region R2 is a region between the nozzles of the showerhead 50 and the wafer holder 11. The region R2 is a region that needs tobe maintained to 500° C. or higher so that GaCl in a material gas doesnot decompose. The region R3 is a region including the particular metal53 covering the surface of the shower head 50. The region R3 is a regionthat needs to be maintained to 800° C. or higher to suppress depositionof GaN polycrystal.

The second heater 32 is arranged around a region R4. The region R4 is aregion including a first material gas generation unit 41. The region R4is a region in which a temperature necessary for stable generation ofGaCl (750° C.) or higher.

<Vapor Phase Epitaxy Method>

A method of executing vapor phase epitaxy of a GaN layer on the wafer 13by the HYPE method will be described. A vapor phase epitaxial conditionis same as the condition aforementioned in connection to the firstembodiment.

In a first step, the first heater 31 is turned on. The region R1 (wafer13), the region R2 (region between the nozzles and the wafer holder 11),and the region R3 (particular metal 53) are heated to 1050±50° C. Due tothis, all of the regions R1 to R3 can be maintained at their requiredtemperatures or higher by the first heater 31. Further, by turning onthe second heater 32, the region R4 (first material gas generation unit41) is heated to 750° C.

When a surface of the particular metal 53 has reached 800° C., theprocess proceeds to a second step. A timing of transition to the secondstep may be determined by measuring the surface temperature of theparticular metal 53 by using various sensors. In the second step, thefirst valves 61 and the second valves 62 are opened to start supplies ofthe first material gas G1 and the second material gas G2. Due to this,the vapor phase epitaxy of the GaN layer on the wafer 13 can beexecuted. When the vapor phase epitaxy is completed, the processproceeds to a third step, and closes the first valves 61 and the secondvalves 62. The supplies of the first material gas G1 and the secondmaterial gas G2 are terminated. After this, the process proceeds to afourth step, and the first heater 31 and the second heater 32 are turnedoff. Due to this, heating of the surface of the particular metal 53 iscompleted.

<Effect>

In the HVPE method, it is difficult to grow a long crystal (which mayalso be termed a thick crystal) on a C-plane of GaN. This is due to adifficulty in suppressing occurrence of abnormal growth. As a factor ofthe occurrence of abnormal growth, ocurrences of gas pipe clogs andchanges in gas flows caused by the deposition of the GaN polycrystal onthe first nozzles 51 and the second nozzles 52 arranged on the surfaceof the shower head 50 may be exemplified. As a countermeasure thereto,the surface of the shower head 50 may be covered with a particular metalcapable of decomposing NH₃ by the catalytic effect (such as tungsten).However, the inventors of the present invention have found that, inorder to suppress the deposition of the GaN polycrystal, covering thesurface of the shower head 50 with the particular metal is notsufficient, and the surface temperature of the particular metal needs tobe heated to 800° C. or higher. This is assumed as being due to activehydrogen generated by decomposition of NH₃ by the catalytic effectsuppressing the deposition of the GaN polycrystal. Further, in order forthe active hydrogen to react with the GaN polycrystal, it is assumedthat a temperature therefor needs to be 800° C. or higher. As such, thevapor phase epitaxial growth device 1 a of the second embodiment isprovided with the first heater 31 that surrounds the region R3 includingthe particular metal 53. Due to this, the surface of the particularmetal can be heated to 800° C. or higher, and it becomes possible tosuppress the deposition of the GaN polycrystal on the surface of theshower head 50.

In the vapor phase epitaxy method of the second embodiment, the suppliesof the first material gas G1 and the second material gas G2 are startedwhen the surface of the particular metal 53 has reached 800° C. orhigher (second step). Further, after having closed the first valves 61and the second valves 62 in the third step, the first heater 31 isturned off in the fourth step. The first valves 61 and the second valves62 can be controlled according to the above process flow to “supply thefirst material gas G1 and the second material gas G2 in a period duringwhich the surface of the particular metal 53 is 800° C. or higher”.Thus, the GaN polycrystal can be suppressed from being deposited on thesurface of the shower head 50.

Third Embodiment

FIG. 6 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 201 according to a third embodiment along thelateral direction. The vapor phase epitaxial growth device 201 is anexample of a device configuration for implementing the HVPE method. Thevapor phase epitaxial growth device 201 is provided with a reactorvessel 210, a susceptor 216, a first material gas supply pipe 221, asecond material gas supply pipe 222, and a gas exhaust pipe 271. Thesusceptor 216 is accommodated within the reactor vessel 210. A wafer 213is held on a wafer holding surface of the susceptor 216.

The reactor vessel 210 has the first material gas supply pipe 221configured to supply a first material gas G1 and the second material gassupply pipe 222 configured to supply a second material gas G2 connectedthereto. An inner diameter D11 of the second material gas supply pipe222 is larger than an outer diameter D12 of the first material gassupply pipe 221. The first material gas supply pipe 221 is arrangedinside the second material gas supply pipe 222. A gap is defined betweenan outer wall of the first material gas supply pipe 221 and an innerwall of the second material gas supply pipe 222, and the second materialgas G2 flows in this gap. An end region E1 of the first material gassupply pipe 221 and the second material gas supply pipe 222 functions asnozzles. Inner walls and outer walls of the first material gas supplypipe 221 and the second material gas supply pipe 222 are covered withparticular metals 253 in a vicinity of the end region E1.

A first material gas generation unit 241 is arranged on a passage of thefirst material gas supply pipe 221. Metal gallium 243 is accommodatedwithin the first material gas generation unit 241. A HCl gas is suppliedto an inlet of the first material gas supply pipe 221 and the firstmaterial gas G1 is discharged from a nozzle thereof. The second materialgas G2 is supplied to an inlet of the second material gas supply pipe222 and the second material gas G2 is discharged from a nozzle thereof.The gas exhaust pipe 271 is connected to the reactor vessel 210.Material gases used for vapor phase epitaxy of GaN are discharged to avent line through the gas exhaust pipe 271.

A heater 231 is arranged around the susceptor 216 at an outer peripheryof the reactor vessel 210. The heater 231 is a device configured to heatthe wafer 213 by a hot wall scheme. Due to this, the wafer 213 can bemaintained at a temperature sufficient for GaN crystal growth (1050±50°C.). Further, deposition of byproducts on an inner wall of the reactorvessel 210 can be suppressed. A heater 232 is arranged around the endregion E1 outside the reactor vessel 210. Due to this, the particularmetals 253 arranged in the end region E1 can be maintained to 800° C. orhigher. A heater 233 is arranged around the first material gasgeneration unit 241 outside the second material gas supply pipe 222. Dueto this, the first material gas generation unit 241 can be maintained to750° C. or higher to generate GaCl.

<Effect>

The vapor phase epitaxial growth device 201 of the third embodiment isprovided with the heater 232 that surrounds the particular metals 253arranged in the vicinity of the nozzles (end region E1). Due to this,surfaces of the particular metals 253 can be heated to 800° C. orhigher, by which deposition of GaN polycrystal onto the nozzles can besuppressed.

Fourth Embodiment

FIG. 7 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 301 according to a fourth embodiment along thelateral direction. The vapor phase epitaxial growth device 301 of thefourth embodiment has a configuration in which positions of a firstmaterial gas supply pipe 221 and a second material gas supply pipe 222are moved from a side of a right side surface of a wafer to above thewafer as compared to the vapor phase epitaxial growth device 201 of thethird embodiment. Further, it has a configuration in which a position ofa gas exhaust pipe 271 is moved from a side of a left side surface ofthe wafer to below the wafer. Members being same as those of the vaporphase epitaxial growth device 201 of the third embodiment are given samereference signs, and detailed description thereof will be omitted.

In the vapor phase epitaxial growth device 301 of the fourth embodimentas well, surfaces of particular metals 253 can be heated to 800° C. orhigher by a heater 232. Due to this, deposition of GaN polycrystal onnozzles can be suppressed.

Fifth Embodiment

FIG. 8 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 401 according to a fifth embodiment along thelateral direction. The vapor phase epitaxial growth device 401 of thefifth embodiment has a configuration in which a common pipe 423 isprovided as compared to the vapor phase epitaxial growth device 201 ofthe third embodiment. Same reference signs are given to members that aresame as those of the vapor phase epitaxial growth device 201 of thethird embodiment, and detailed description thereof will be omitted.

A first material gas supply pipe 421 and a second material gas supplypipe 422 are connected to the common pipe 423 at a junction J1. In otherwords, the first material gas supply pipe 421 and the second materialgas supply pipe 422 configure an integrated common pipe 423. An endregion E2 of the common pipe 423 functions as a nozzle.

In the common pipe 423, a position of inlets of a first material gas G1and a second material gas G2 are termed a position P1. Further, aposition of the nozzle is termed a position P2. A region extending fromthe position P1 to the position P2 is termed a region R11. The commonpipe 423 has an inner wall covered with a particular metal 453 over itsentire region including the region R11. Further, in a vicinity of theend region E2, the inner wall and an outer wall of the common pipe 423are covered with the particular metal 453.

The first material gas G1 is supplied to an inlet of the first materialgas supply pipe 421 and the second material gas G2 is supplied to aninlet of the second material gas supply pipe 422. The first material gasG1 and the second material gas G2 are mixed within the common pipe 423and a mixed gas is discharged from the nozzle of the common pipe 423.

Heaters 432 and 433 are arranged to surround the common pipe 423 over anentire length of the region R11. Due to this, the particular metal 453can be maintained to 800° C. or higher over the entire region includingthe region R11.

<Effect>

In the vapor phase epitaxial growth device 401 of the fifth embodiment,the first material gas G1 and the second material gas G2 can be mixed byusing the region R11 from the position P1 to the position P2 of thecommon pipe 423. Since sufficient distance and time for mixing thesegases can be secured, these gases can be discharged from the nozzle ofthe common pipe 423 in a well-mixed state. Excellent GaN crystal can begrown at a fast speed, and this is advantageous in cost reduction.Further, when sufficient distance and time for mixing these gases areensured, there is a risk that GaN polycrystal is deposited on the innerwall of the common pipe 423. To address this, in the vapor phaseepitaxial growth device 401 of the fifth embodiment, the surface of theparticular metal 453 on the inner wall of the common pipe 423 can beheated to 800° C. or higher over the entire length of the common pipe423 by using the heaters 432 and 433. Deposition of the GaN polycrystalon the inner wall of the common pipe 423 can be suppressed.

Sixth Embodiment <Configuration of Vapor Phase Epitaxial Growth Device>

FIG. 9 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 1 b according to an aspect of art disclosedherein along the lateral direction. In the vapor phase epitaxial growthdevice 1 b of FIG. 9 , members being same as those of the vapor phaseepitaxial growth device 1 of FIG. 1 and the vapor phase epitaxial growthdevice 1 a of FIG. 5 are given same reference signs, and detaileddescription thereof will be omitted.

FIG. 10 is a partially enlarged view of a cross-section of a waferholder 11, a ring plate 12, and a shower head 50. The wafer holder 11includes a holder body 11 b and a supporting portion 11 c. A waferholding surface 11 a is provided on a lower surface of the wafer holder11. The supporting portion 11 c of the wafer holder 11 is configured tohold a wafer 13 such that a surface of the wafer 13 is orientedsubstantially vertically downward. The wafer 13 is a base substrate forgrowing GaN monocrystal, and is GaN monocrystal. The surface of thewafer 13 is a +c-plane (also termed a (0001) plane).

A surface of the supporting portion 11 c is covered with a particularmetal 17. The particular metal 17 is a metal capable of decomposing asecond material gas G2 by a catalytic effect. In the present embodiment,a material containing tungsten is used as the particular metal 17. Dueto this, an effect of suppressing deposition of GaN polycrystal on thesurface of the supporting portion 11 c is obtained. This is achieved byactive hydrogen generated by decomposition of NH₃ by the catalyticeffect suppressing deposition of the GaN polycrystal.

A ring plate 12 is arranged below the wafer holder 11. A surface of thering plate 12 is covered with a particular metal 18. The particularmetal 18 is a metal capable of decomposing the second material gas G2 bya catalytic effect. In the present embodiment, a material containingtungsten is used as the particular metal 18. Due to this, an effect ofsuppressing deposition of GaN polycrystal on the surface of the ringplate 12 is obtained.

A lower surface 12 a of the ring plate 12 is a surface corresponding tothe wafer holding surface 11 a. In the present embodiment, the lowersurface 12 a is a surface parallel to the wafer holding surface 11 a.The ring plate 12 is provided with a hole 12 b corresponding to thewafer 13 held by the wafer holding surface 11 a. Here, a center axis ofthe wafer holder 11 is assumed as A1. A position of an inner wall Hew ofthe supporting portion 11 c is assumed as a position P1. A position ofan inner wall 12 w defining the hole 12 b of the ring plate 12 isassumed as a position P2. A distance D2 from the center axis A1 to theposition P2 may be equal to or greater than a distance D1 from thecenter axis A1 to the position P1.

FIG. 11 is a view seeing a cross-section along a line A-A of FIG. 9 fromvertically below. As shown in FIG. 11 , the ring plate 12 is aring-shaped member. As aforementioned, in a case where the distance D2is equal to or greater than the distance D1, an entirety of an exposedsurface of the wafer 13 is encompassed by a range of the hole 12 b ofthe ring plate 12.

An upper end of a rotary shaft 14 is connected to an actuator 15. Due tothis, the wafer holder 11 is capable of being moved along the centeraxis A1, which is vertical to the wafer holding surface 11 a, in anupward direction (direction toward an upper surface 11 d side of thewafer holder 11) and in a downward direction (direction toward the waferholding surface 11 a of the wafer holder 11). Further, the wafer holder11 can be rotated by the actuator 15.

The shower head 50 is arranged at a position facing the wafer holdingsurface 11 a of the wafer holder 11. Regions on a surface of the showerhead 50 where first nozzles 51 and second nozzles 52 are not providedare covered with a particular metal 53. In the present embodiment, amaterial containing tungsten is used as the particular metal.

<Vapor Phase Epitaxy Method>

A method of executing vapor phase epitaxy of a GaN layer on the wafer 13by the HYPE method will be described. A vapor phase epitaxial conditionis same as the condition aforementioned in connection to the firstembodiment.

A first heater 31 and a second heater 32 are turned on, and supplies ofa first material gas G1 and a second material gas G2 are started. Due tothis, vapor phase epitaxy of a GaN crystal layer on the wafer 13 can beexecuted. A growing speed of the GaN crystal layer is about 50 to 1000μm/hour. When the GaN crystal layer 19 grows from a state in FIG. 10 toa state in FIG. 12 , the actuator 15 starts a control to move the waferholder 11 upward (in a direction of an arrow Y10) along the center axisA1. A rising speed of the wafer holder 11 is same as the growing speedof the GaN crystal layer 19. The growing speed may be predicted bycalculation or may be calculated based on actual measurement. The statein FIG. 12 is a state in which a distance D3 from the wafer holdingsurface 11 a to the lower surface 12 a of the ring plate 12 is greaterthan a distance D4 from the wafer holding surface 11 a to a surface 19 aof the GaN crystal layer 19 by a predetermined distance PD. In otherwords, the state in FIG. 12 is a state in which the lower surface 12 aof the ring plate 12 protrudes toward a shower head 50 side by thepredetermined distance PD with respect to the surface 19 a of the GaNcrystal layer 19. The predetermined distance PD may be set to anarbitrary value based on experiment and the like.

A depiction of a state of having further grown the GaN crystal layer 19from the state in FIG. 12 by a thickness T1 is shown in FIG. 13 . Sincethe rising speed of the wafer holder 11 is equal to the growing speed ofthe GaN crystal layer 19, the wafer holder 11 has risen by a distanceequal to the thickness T1. As a result, a state in which the distance D3is greater than the distance D4 by the predetermined distance PD ismaintained. Further, a distance D5 between the surface 19 a of the GaNcrystal layer 19 and the surface of the shower head 50 (gas supplyoutlet) is maintained constant in FIGS. 12 and 13 .

<Effect>

Firstly, a comparative example will be described with reference to FIGS.14 and 15 . The comparative example is an example of a case in which thering plate 12 of the present embodiment is not provided. A case will bedescribed in which, in a course of a GaN crystal layer 19 growing andincreasing its thickness from a state in FIG. 14 to a state in FIG. 15 ,a wafer holder 11 is moved upward (in a direction of an arrow Y10) alonga center axis A1 according to increase in the thickness. In this case, adistance D5 between a surface 19 a of the GaN crystal layer 19 and asurface of a shower head 50 (gas supply outlet) is maintained constant.However, a distance D6 between a lower surface 11 cs of a supportingportion 11 c arranged at an outer periphery of the GaN crystal layer 19and the surface of the shower head 50 is not maintained constant, and isincreased as the wafer holder 11 rises. As a result, flows of first andsecond material gases at a wafer outer peripheral portion cannot bemaintained constant. That is, gas flows Y20 a shown in FIG. 14 and gasflows Y20 b shown in FIG. 15 become different. When this happens,passages of gas flows become unstable and raw material supplies to thesurface 19 a of the GaN crystal layer 19 as well as a temperaturedistribution changes from an initial stage of growth, by which crystalquality and distribution might be deteriorated. Further, an end surface19 b at the outer peripheral portion of the GaN crystal layer 19 thathad grown to increase its thickness in a state where a crystal end faceis open does not become vertical to a surface of a wafer 13 (c-plane),and instead becomes a tapered surface (see FIG. 15 ). This is because atapered surface is a more stable plane than a vertical surface. Such atapered surface is a plane ({10-11} plane) that is more stable than am-plane, or a plane ({11-21} plane, {11-22} plane) that is more stablethan an a-plane. Further, when such a tapered surface incorporatesoxygen therein, a grating constant thereof becomes small and stress isgenerated, by which a crack may occur in the grown GaN crystal layer 19.

To the contrary, the vapor phase epitaxial growth device lb of thepresent embodiment is provided with the ring plate 12, as shown in FIGS.12 and 13 . A position of the ring plate 12 is fixed relative to theshower head 50. As such, even in the case of moving the wafer holder 11upward in accordance with the increase in the thickness of the GaNcrystal layer 19, a distance D7 between the lower surface 12 a of thering plate 12 and the surface of the shower head 50 can be set constant.As a result, the present inventors have found, as a first effect of thering plate 12, that a crystal that is uniform in a thickness directioncan be obtained even in a case of growing the GaN crystal layer 19 by along-term growth (that is, thick growth). This is considered as beingdue to the fact that flows of the first and second material gases at thewafer outer peripheral portion can be maintained constant by the ringplate 12 even in the case of rising the wafer holder 11. That is, it isconsidered as being due to the fact that gas flows Y20 shown in FIGS. 12and 13 can be maintained same while growing the GaN crystal layer 19.

Further, the present inventors have found, as a second effect of thering plate 12, that the end surface 19 b of the outer peripheral portionof the GaN crystal layer 19 can be formed vertical with respect to thesurface of the wafer 13. This is considered to be due to the fact thatthe state in which the lower surface 12 a of the ring plate 12 protrudesto the shower head 50 side by the predetermined distance PD with respectto the surface 19 a of the GaN crystal layer 19 can be achieved (seeFIGS. 12 and 13 ). This will be described specifically. By causing thelower surface 12 a of the ring plate 12 to protrude, stagnation of thegas flows can be created in a region R1 in a vicinity of a boundarybetween the ring plate 12 and the GaN crystal layer 19. A part of thestagnated gases is considered to be contributing to formation of avertical crystal plane (such as a m-plane ({1-100} plane) and an a-plane({11-20} plane)) along a wall surface. Due to this, a situation in whichoxygen atoms are incorporated into the end surface 19 b of the grown GaNcrystal layer and a crack is generated in the GaN crystal layer 19 canbe suppressed. Further, when a plurality of wafers is to be cut out fromthe GaN crystal layer 19, wafers with constant areas can be cut out.

Seventh Embodiment

FIG. 16 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 201 a according to a seventh embodiment alongthe lateral direction. The vapor phase epitaxial growth device 201 a ofthe seventh embodiment has a configuration in which supplying directionsof a first material gas G1 and a second material gas G2 are changed fromupward to lateral and an orientation of a wafer surface is changed fromdownward to upward as compared to the vapor phase epitaxial growthdevice 1 b of the sixth embodiment. A basic configuration of the vaporphase epitaxial growth device 201 a of the seventh embodiment is same asthat of the vapor phase epitaxial growth device 1 b of the sixthembodiment, thus a detailed description thereof will be omitted.Further, in the vapor phase epitaxial growth device 201 a of the seventhembodiment (FIG. 16 ), constituent features that are same as those ofthe vapor phase epitaxial growth device 201 of the third embodiment(FIG. 6 ) are given same reference signs, and detailed descriptionthereof will be omitted.

The vapor phase epitaxial growth device 201 a is provided with a waferholder 211 and a ring plate 212. The wafer holder 211 is provided with aholder body 211 b and a supporting portion 211 c. A wafer holdingsurface 211 a is provided on an upper surface of the wafer holder 211. Awafer 213 is held on the wafer holding surface 211 a.

The ring plate 212 is arranged above the wafer holder 211. An uppersurface 212 a of the ring plate 212 is a surface corresponding to thewafer holding surface 211 a. In the present embodiment, the uppersurface 212 a is a plane parallel to the wafer holding surface 211 a.The ring plate 212 is provided with a hole 212 b corresponding to thewafer 213.

An actuator 215 is connected to a lower portion of the wafer holder 211via a rotary shaft 214. The wafer holder 211 can be moved in up and downdirections (a z direction in FIG. 16 ) along a center axis A2 verticalto the wafer holding surface 211 a.

<Effect>

The vapor phase epitaxial growth device 201 a of the seventh embodimentis provided with the ring plate 212. The ring plate 212 is fixed insidethe reactor vessel 210. As such, by setting a lowering speed of thewafer holder 211 and a growing speed of a GaN crystal layer that growson the wafer 213 to be same, a distance between the upper surface 212 aof the ring plate 212 and a surface of the GaN crystal layer can bemaintained constant. As a result, even in a case of lowering the waferholder 211, flows of the first and second material gases at a waferouter peripheral portion can be maintained constant. A GaN crystal layer19 that is uniform in a thickness direction can be grown. Further,stagnation of the gas flows can be created in a region at the outerperipheral portion of the surface of the GaN crystal layer. Due to this,an end surface at the outer peripheral portion of the grown GaN crystallayer can be formed vertical to the surface of the wafer 213. As such, asituation in which a crack is generated in the grown GaN crystal layercan be suppressed.

Eighth Embodiment

FIG. 17 is a schematic cross-sectional view seeing a vapor phaseepitaxial growth device 301 a according to an eighth embodiment alongthe lateral direction. The vapor phase epitaxial growth device 301 a ofthe eighth embodiment has a configuration in which positions of a firstmaterial gas supply pipe 221 and a second material gas supply pipe 222moved from right side of a wafer to above the wafer as compared to thevapor phase epitaxial growth device 201 a of the seventh embodiment.Further, it has a configuration in which a position of a gas exhaustpipe 271 is changed from left side of the wafer to below the wafer.Constituent features that are same as those of the vapor phase epitaxialgrowth device 201 a of the seventh embodiment are given same referencesigns, and detailed description thereof will be omitted.

In the vapor phase epitaxial growth device 301 a of the eight embodimentas well, a lowering speed of a wafer holder 211 and a growing speed of aGaN crystal layer that grows on a wafer 213 are set to be same, by whicha distance between an upper surface 212 a of a ring plate 212 and asurface of the GaN crystal layer can be maintained constant. Since flowsof first and second material gases at a wafer outer peripheral portioncan be maintained constant, the GaN crystal layer that is uniform in athickness direction can be grown. Further, stagnation of the gas flowscan be created in a region at the outer peripheral portion of thesurface of the GaN crystal layer, by which an end surface at the outerperipheral portion of the grown GaN crystal layer can be formed verticalto a surface of the wafer 213.

<Modifications>

Embodiments of the present invention have been described in detail withreference to the drawings, however, these are mere exemplary indicationsand thus do not limit the scope of the claims. The art recited in theclaims includes modifications and variations of the specific examplespresented above.

A region where heater(s) are arranged is not limited to a configurationin which it is divided into two, namely the regions H1 and H2, and maybe divided into three or more. Due to this, temperatures of the wafer13, the shower head 50, the first material gas generation unit 41, andthe like can be controlled at a greater detail. For example, atemperature of a portion where the GaN polycrystal should not bedeposited may be set higher than the temperature of the surface of thewafer 13. Specifically, a heater arranged around the wafer 13 and aheater arranged around the shower head 50 may be configured of separateheaters. By setting the temperature of the surface 50 a of the showerhead 50 higher than the temperature of the surface of the wafer 13 byabout 50° C., deposition of the GaN polycrystal onto the surface 50 acan be suppressed.

The temperature sufficient for the GaN crystal growth has been explainedas 1050±50° C. Further, the temperature necessary for the generation ofGaCl has been explained as 750° C. or higher. However, thesetemperatures are mere examples. For example, the temperature sufficientfor the GaN crystal growth may be in a range of 1050±100° C.

A shape of the gas exhaust pipe 23 is not limited to shapes in the aboveembodiments, and may have a variation. For example, it may have a shapein which a plurality of narrow pipes is arranged on the outer peripheryof the shower head 50.

The particular gas G3 discharged from the shower head 50 may containHCl. Due to this, the GaN polycrystal having deposited on the surface ofthe shower head 50 and the nozzles thereof can be decomposed.

Numbers and arrangements of the first material gas supply pipes 21, thesecond material gas supply pipes 22, and the HCl gas supply pipes 25shown in FIG. 1 are mere examples, and no limitation is made to thisconfiguration.

A pump that is not shown may be provided on the vent line. A pressure inthe gas exhaust pipe 23 may be set to a negative pressure with respectto a pressure in the vicinity of the surface of the wafer 13. Due tothis, the gas discharge to sideways from the shower head 50 and downwardfrom the wafer 13 as shown by the arrows Y2 in FIG. 1 can be performedsmoothly.

The art disclosed herein is not limited to the HVPE method, and may beadapted to various epitaxial methods. For example, it may be adapted toa MOVPE (Metal Organic Vapor Phase Epitaxy) method. In this case,trimethylgallium (Ga(CH₃)₃) may be used as the first material gas G1.

The art disclosed herein is not limited to GaN, and may be adapted tocrystal growth of various other compound semiconductors. For example, itmay be adapted to growth of GaAs crystal. In this case, arsine (AsH₅)may be used as the second material gas G2.

The first material gas G1 and the second material gas G2 may each beflown with a carrier gas such as H₂ and N₂.

Tungsten has been explained as the example of the metal capable ofdecomposing NH₃ by the catalytic effect, however, no limitation is madeto this material. Tungsten oxides (WOx), tungsten carbides (WCx), andtungsten nitrides (WNx) may be used as well. Further, metals containingtungsten (tungsten alloys) and oxides, carbides, and nitrides thereofmay be used as well. Further, other metals such as ruthenium, iridium,platinum, molybdenum, palladium, rhodium, iron, nickel, and rhenium maybe used as well. Further, oxides, carbides, and nitrides of such metalsand alloys containing such metals may be used as well.

The structure of the shower head is not limited to the structure shownin the second embodiment. For example, it may have a configuration inwhich a mixed gas in which the first material gas G1 and the secondmaterial gas G2 are mixed is discharged from the shower head. FIG. 18 isa schematic cross-sectional view seeing a shower head 50 provided with amixing chamber 57 for generating the mixed gas along the lateraldirection. First nozzles 51 and second nozzles 52 of the shower head 50are connected to a lower portion of the mixing chamber 57. A pluralityof gas supply outlets 58 is arranged at an upper portion of the mixingchamber 57. Inner and outer walls of the mixing chamber 57 are coveredwith a particular metal 56. The first material gas G1 and the secondmaterial gas G2 are mixed inside the mixing chamber 57 and the mixed gasGm is discharged from the gas supply outlets 58. An effect thereof willbe described. Since the mixed gas Gm can be discharged from the gassupply outlets 58 of the mixing chamber 57, a V/III ratio of a materialgas supplied to a wafer can be uniformized. A uniform GaN crystal can begrown. Further, since it becomes possible to increase the V/III ratio, agrowing rate of the GaN crystal can be increased. Further, in a case ofnot having the mixing chamber 57, it has been necessary to ensure acertain degree of distance between gas supply outlets and a wafersurface to sufficiently mix the first material gas G1 and the secondmaterial gas G2. However, in the structure of FIG. 18 provided with themixing chamber 57, the gas supply outlets and the wafer surface can beset closer, by which the growing rate of the GaN crystal can beincreased and gas consumption amounts can be suppressed by increasingraw material efficiency. Further, a first heater 31 (see FIG. 1 ) isarranged around the mixing chamber 57. Due to this, the particular metal56 can be maintained to 800° C. or higher over an entirety of the mixingchamber 57. Deposition of GaN polycrystal on the inner and outer wallsof the mixing chamber 57 can be suppressed.

In the second embodiment, the surface of the shower head 50 is coveredwith the particular metal 53, however, no limitation is made to thisconfiguration, and a lateral side surface of the shower head 50 may becovered with the particular metal 53. In the third to fifth embodiments,configurations in which the inner and outer walls of the gas supplypipes in the vicinities of the ends thereof have been described,however, no limitation is made to these configurations. The gas supplypipes may be constituted of a material containing a particular metal.

In the second to fifth embodiments, configurations in which the gassupply outlets of both the first material gas supply pipe and the secondmaterial gas supply pipe are covered with the particular metal have beendescribed, however, no limitation is made to these configurations. Thesurface of at least one of the gas supply pipes in a region in thevicinity of its gas supply outlet may be covered with the particularmetal. For example, in structures as in the third embodiment (FIG. 6 )and the fourth embodiment (FIG. 7 ) in which the first material gassupply pipe 221 is arranged inside the second material gas supply pipe222, the GaN polycrystal tends to deposit in the region in the vicinityof the supply outlet of the first material gas supply pipe 221. As such,only the inner and outer walls of the first material gas supply pipe 221at its supply outlet may be covered with the particular metal 253. Tothe contrary, only the inner and outer walls of the second material gassupply pipe 222 at its supply outlet may be covered with the particularmetal 253.

In the second embodiment, a configuration in which the regions R1 to R3are surrounded by the first heater 31 has been described, however, thefirst heater 31 may be divided into two or more. Due to this,temperatures of the regions R1 to R3 can separately be controlled.

Cases in which the first material gas G1 is a gas containing GaCl hasbeen described, however, no limitation is made to this configuration.The first material gas G1 may be any gas having whatever chemicalcomposition so long as it is a gas containing Ga. For example, the firstmaterial gas G1 may be a gas containing gallium trichloride (GaCl₃). Inthis case, a growing temperature of about 1300° C. may be used. GaNcrystal growth may be performed on a N-plane (−c plane). Due to this, aGaN crystal surface can be enlarged as growth thereof progresses.

The numbers and arrangements of the first material gas supply pipes andthe second material gas supply pipes described herein are mere examples,and no limitation is made to these configurations.

The lower surface 12 a of the ring plate 12 described in FIG. 10 is notlimited to a flat surface. It may be a curved surface, and a partthereof may be a flat surface. Further, in a case where the lowersurface 12 a includes a flat surface portion, the flat surface portionmay have an angle with respect to the wafer holding surface 11 a. Thesame applies to the upper surface 212 a of the ring plate 212 in FIGS.16 and 17 .

A shape of the wafer 13 is not limited to circle. Substrates in shapesof square, hexagon, and the like may be used.

The ring plates 12 and 212 are not limited to being circular, and may bein shapes such as polygons and rectangles. Further, the ring plates 12and 212 each do not need to have a shape that is completely closed, solong as they have a substantially ring shape. For example, they may eachbe C-shaped.

In FIG. 10 , the case in which the distance D2 is equal to or greaterthan the distance D1 has been described, however, no limitation is madeto this configuration. For example, the distance D2 may be smaller thanthe distance D1. Due to this, even in a case where a crystal diametershrinks in an initial period until when the surface of the GaN crystallayer 19 reaches the upper surface of the ring plate 12 (that is, aperiod before the ring plate 12 starts to function), an inner diameterof the hole 12 b of the ring plate 12 can be adapted to correspond to ashrunk crystal diameter.

Cases in which a surface of the base substrate is the +c-plane have beendescribed, however, no limitation is made to these configurations.Various planes may be used as the surface of the base substrate.

Cases in which the m-plane ({1-100} plane) and the a-plane ({11-20}plane) are used as examples of forming the end surfaces vertical to thecrystal surfaces have been described, however, no limitation is made tothis configuration. Various crystal planes and intermediate surfaceconfigurations may be used.

Technical features described in the description and the drawings maytechnically be useful alone or in various combinations, and are notlimited to the combinations as originally claimed. Further, the artdescribed in the description and the drawings may concurrently achieve aplurality of aims, and technical significance thereof resides inachieving any one of such aims.

The center hole 54 is an example of a first center hole. The surroundinghole 55 is an example of a first surrounding hole. The particular gassupply pipe 16 is an example of a particular gas supply unit. The firstheater 31, the heater 232, and the heater 432 are examples of a firstheating unit. The first heater 31 is an example of a third heating unit.The first valve 61 is an example of a first supply unit. The secondvalve 62 is an example of a second supply unit. The ring plate 12 is anexample of a ring unit. The lower surface is an example of a firstsurface. The upper surface is an example of a second surface.

1. A method for controlling vapor phase epitaxial growth deviceconfigured to grow a compound semiconductor, the vapor phase epitaxialgrowth device comprising: a reactor vessel; a wafer holder arrangedwithin the reactor vessel; a first material gas supply pipe; a secondmaterial gas supply pipe; a shower head to which outlets of the firstmaterial gas supply pipe and the second material gas supply pipe areconnected, a surface of the shower head being arranged at a positionbelow the wafer holder and facing the wafer holder; a particular gassupply unit; and a gas exhaust pipe, the method comprising: holding awafer by the wafer holder such that a wafer surface is orientedsubstantially vertically downward; flowing the first material gas andthe second material gas discharged from the shower head within thereactor vessel vertically upward; flowing, by using the particular gassupply unit, a particular gas into the reactor vessel substantiallyvertically downward from above the wafer holder, the particular gasbeing a gas not containing oxygen and being a gas that does not reactwith the first material gas nor with the second material gas;exhausting, by using the gas exhaust pipe, the first material gas andthe second material gas that were used for crystal growth of thecompound semiconductor on the surface of the wafer in a lateral sidesurface direction of the shower head and a downward direction from thewafer; and exhausting, by using the gas exhaust pipe, the particular gasin the reactor vessel from below the wafer surface, wherein a distancebetween the gas exhaust pipe and an axis line passing through a centerof the wafer surface and vertical to the wafer surface is greater thandistances between the axis line and each of the first material gassupply pipe and the second material gas supply pipe.
 2. The methodaccording to claim 1, wherein an inlet of the gas exhaust pipe islocated on a lateral side surface of the shower head.
 3. The methodaccording to claim 1, wherein the surface of the shower head has amaterial containing tungsten arranged thereon.
 4. The method accordingto claim 1, wherein a surface of at least one of the first material gassupply pipe and the second material gas supply pipe in a region in avicinity of a gas supply outlet is covered with a catalyst, the catalystis capable of decomposing the second material gas by a catalytic effect,and the method further comprising heating a surface of the catalyst to800° C. or higher and 1100° C. or lower.
 5. The method according toclaim 4, wherein the surface of the shower head at least on a gas supplyoutlet side is covered with the catalyst.
 6. The method according toclaim 4, wherein the catalyst is a material containing tungsten.
 7. Themethod according to claim 1, wherein the vapor phase epitaxial growthdevice further comprises a ring unit including a hole corresponding tothe wafer held by the wafer holder, and the method further comprising:moving at least one of the wafer holder and the ring unit along the axisline vertical to the wafer surface; and maintaining a constant distancebetween a surface of the ring unit and a surface of a compoundsemiconductor crystal grown on the wafer.
 8. The method according toclaim 7, wherein the surface of the ring unit is covered with a catalystcapable of decomposing the second material gas by a catalytic effect. 9.The method according to claim 8, wherein the catalyst is a materialcontaining tungsten.
 10. The method according to claim 1, wherein thefirst material gas is a gas containing GaCl, and the second material gasis a gas containing NH₃.